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 BYV29-600_2 ? NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 24 October 2007 2 of 8 NXP Semiconductors BYV29-600 Recti?er diode ultrafast 3. Ordering information 4. Limiting values 5. Thermal characteristics Table 2. Ordering information Type number Package Name Description Version BYV29-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage square waveform; δ = 1.0; Tmb ≤ 100 °C - 600 V IF(AV) average forward current square waveform; δ = 0.5; Tmb ≤ 120 °C-9A IFRM repetitive peak forward current square waveform; δ = 0.5; Tmb ≤ 120 °C - 18 A IFSM non-repetitive peak forward current t = 10 ms; sinusoidal waveform - 70 A t = 8.3 ms; sinusoidal waveform - 77 A Tstg storage temperature ?40 +150 °C Tj junction temperature - 150 °C Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base with heatsink compound; see Figure 1 - - 2.5 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width 001aag913 1 10-1 10 Zth(j-mb) (K/W) 10-3 -6 10-2 tp (s) 10 10 1 10-1 10-5 10-3 10-2 10-4 tp t = p T P t T d |